A Closed-Loop System for Extracting Programming Parameters in Breakdown-Based OTP Memory
A Closed-Loop System for Extracting Programming Parameters in Breakdown-Based OTP Memory
Abstract
Breakdown-based one-time-programmable (OTP) concepts such as gate-oxide antifuses are attractive for compact, logic-compatible storage of immutable security credentials and calibration data. However, dielectric breakdown exhibits strong sensitivity to oxide thickness, defect statistics, and stress history, making fixed worst-case programming recipes inefficient and potentially overstress-prone. This paper presents an autonomous programming-parameter extraction system that identifies a diespecific programming-voltage and pulse-width pair using a closed-loop current-trip condition and a self-regulating highvoltage charge-pump generator. The proposed system performs an ordered two-dimensional search over quantized voltage and time candidates, freezes the programming word at the first verified conduction event. Fabricated in 180 nm CMOS, the prototype demonstrates quantized programming-voltage generation from 5.2 V to 12.5 V, programmable stress windows of 14.2 ms, 28.2 ms, and 56.7 ms, and 363 µW full-cycle search power. Measurements using actual antifuse test structures show a breakdown event at 8.97 V after 13.8 ms within the second 14.2 ms candidate window. With a 1 mA current clamp, numerical integration over the measured 400 µs post-breakdown connected interval gives a posttrip stress energy of 0.985 µJ.
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