Noise Modulation of a Bandgap Reference by Using a Single Resistor
Noise Modulation of a Bandgap Reference by Using a Single Resistor
Abstract:
This manuscript presents a low noise and area efficient voltage bandgap reference (BGR) where its noise is modulated by using a single resistor between the base terminals of the bipolar core. Depending on the value of the resistor, the flicker noise is modulated above the noise corner frequency (thermal noise). This resistor also provides an extra degree of freedom while selecting the BGR output voltage and the temperature coefficient (TC). After optimizing the design via simulations, the BGR was taped out in standard 180nm CMOS TSMC technology. Experimental results are in accordance with simulations, where the BGR provides 0.9 V and occupies an area of only 0.009mm2 . The BGR has a total noise of 14.23µVrms over the frequency range of 0.1 Hz to 10 kHz and only 2.82 µ Vrms between 0.1 Hz and 10 Hz. The average TC is 49.05 ppm◦ C between −20◦ C and 90◦ C. The total power consumption is 55.8 µW at 1.8 V.
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Noise Modulation of a Bandgap Reference by Using a Single Resistor
